Calculations of two dimensional electron gas distributions in AlGaN/GaN material system
作者： Guo Bao-Zeng , Gong Na , Yu Fu-Qiang
DOI: 10.1088/1674-1056/17/1/051
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摘要: This paper presents calculating results of the two-dimensional electron gas (2DEG) distributions in AlGaN/GaN material system by solving Schrodinger and Poisson equations self-consistently. Due to high 2DEG density heterojunction interface, exchange correlation potential should be considered among energy item equation. Analysis is given. The dependencies conduction band edge, on Al mole fraction are presented. polarization fields have strong influence heterojunction, so dependency edge also
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