作者: Max Kneiß , Marcus Jenderka , Kerstin Brachwitz , Michael Lorenz , Marius Grundmann
DOI: 10.1063/1.4892811
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摘要: Electrical transport in undoped and Ni-, Cr-, W-doped TiO2 thin films on SrTiO3(001) is modelled either with the sum of two thermally activated processes exponential temperature dependence conductivity, or three-dimensional Mott variable-range hopping (VRH) an process low activation energy. The latter interpreted for both models as small polaron (<θD/4). According to reduced chi-square values, double model superior data higher ordered grown at 540 460 °C. For lower growth temperature, VRH plus conductivity fits partly better. all dopants, n-type observed.