Method for fabricating a structure for a semiconductor device using a halogen based precursor
作者： Wim Besling
DOI:
关键词:
摘要: There is described a method of fabricating dual damascene structure for semiconductor device. A halogen based pre-cursor used during vapor deposition diffusion barrier layer in trench or via formed substrate. Residual from the allowed to remain on and catalyse growth metal fill via.
lens.org 参考文章(15)
Syun-Ming Jang, Yaoyi Chen, Weng Chang, Tien-I Bao, Dual damascene method employing composite low dielectric constant dielectric layer having intrinsic etch stop characteristics ,(2001)
Chien-Chung Fu, Chao-Cheng Chen, Chemistry for liner removal in a dual damascene process ,(2002)
Toshiyuki Toyoshima, Teruhiko Kumada, Yoshiharu Ono, Takeo Ishibashi, Hideharu Nobutoki, Junjiro Sakai, Via-filling material and process for fabricating semiconductor integrated circuit using the material ,(2003)
Phong H. Nguyen, Josephine Chang, Timothy Weidman, Nikolaos Bekiaris, Method of forming a dual damascene structure using an amorphous silicon hard mask ,(2002)
Ravindra V. Tanikella, Materials, structures and methods for microelectronic packaging ,(2007)
Michael Chiu Kwan, Li-Qun Xia, Reza Arghavani, Kang Sub Yim, Method for producing gate stack sidewall spacers ,(2005)
Lap Chan, Kuan Pei Yap, Flora S. Ip, Wye Boon Loh, Kheng Chok Tee, Passivation of copper interconnect surfaces with a passivating metal layer ,(1998)
Sean M. Seutter, Michael X. Yang, Ming Xi, Formation of a tantalum-nitride layer ,(2005)
Ofer Sneh, Ald apparatus and method ,(2003)