作者: M. Isik , N.M. Gasanly , L. Gasanova
DOI: 10.1016/J.OPTMAT.2018.09.049
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摘要: Abstract Ga2S3 single crystals were studied by x-ray diffraction (XRD), energy dispersive spectroscopy and spectroscopic ellipsometry measurements. XRD pattern of the sample is well-matched with reported hexagonal structure β-Ga2S3. The spectra real imaginary parts complex dielectric function (ɛ = ɛ1 + iɛ2) refractive index (N = n + ik) plotted in 1.2–6.2 eV range according to results ellipsometric data. ɛ2-spectrum analyses absorption coefficient pointed out that has band gap 2.48 eV which consistent Critical point energies β-Ga2S3 also present study.