Optical and nonlinear optical characteristics of the Ge and GaAs nanoparticle suspensions prepared by laser ablation

摘要: AbstractThe laser ablation of Ge and GaAs targets placed in water ethanol was carried out using the fundamental radiation nanosec-ond Nd:YLF laser. The results preparation optical nonlinear characterization nanoparticlesuspensions are presented. considerable shift band gap energy nanoparticles compared to bulk semiconductors wasobserved. distribution nanoparticle sizes estimated range 1.5–10 nm on basis TEM spectral measure-ments. refractive indices absorption coefficients were defined by z-scantechnique second harmonic picosecond Nd:YAG (k = 532 nm). 2006 Elsevier B.V. All rights reserved. PACS: 42.65.An; 42.65.Jx; 42.70.Nq; 78.40.Fy; 78.67.BfKeywords: Laser ablation; Semiconductors; Nanoparticles search optimization new methods for thepreparation colloidal nanostructures is considerableimportance nowadays. One most reasonable andeasy-to-operate techniques isa ablation. This technique an effective one a number materialssuch as nanolayers [1] solutions nanopar-ticles [2–6]. theoretical investigations abla-tion metals [7–9] organic materials [10] liquidsshowed main directions optimal preparationof nanostructures. Previously, we have demonstrated thepossibility some semiconductor(CdS [2,3],As