Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
作者： Robert A. Pucel , Hermann A. Haus , Hermann Statz
DOI: 10.1016/S0065-2539(08)61205-6
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摘要: Publisher Summary This chapter examines the signal and noise properties of gallium arsenide (GaAs) microwave field-effect transistors (FET). High frequency (GaAs FETs) have demonstrated remarkably low figures high power gains at frequencies. A practical GaAs FET is usually fabricated by deposition or diffusion source, gate, drain contacts on surface an appropriately doped thin epitaxial n-type layer. layer, in turn, grown a semi-insulating wafer either vapor liquid technique. The apparent minor role played negative resistance region short-gate FETs suggests that radiofrequency instabilities due to this region, if they exist, occur frequencies far above normal regime FETs. small-signal equivalent circuit FET, valid up moderately elaborated. It found produced both sources intrinsic device thermal associated with parasitic resistances.
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sci-hub.se 参考文章(59)
Edward S. Yang, Current Saturation Mechanisms in Junction Field-Effect Transistors Advances in Electronics and Electron Physics Volume 31. ,vol. 31, pp. 247- 265 ,(1972) , 10.1016/S0065-2539(08)60225-5
K. Tarnay, F.N. Trofimenkoff, The effect of the field-dependent mobility on field-effect transistor characteristics Proceedings of the IEEE. ,vol. 54, pp. 1077- 1078 ,(1966) , 10.1109/PROC.1966.5004
J. G. Ruch, G. S. Kino, Transport Properties of GaAs Physical Review. ,vol. 174, pp. 921- 931 ,(1968) , 10.1103/PHYSREV.174.921
K. Hartmann, M.J.O. Strutt, Changes of the four noise parameters due to general changes of linear two-port circuits IEEE Transactions on Electron Devices. ,vol. 20, pp. 874- 877 ,(1973) , 10.1109/T-ED.1973.17761
W. Shockley, A Unipolar "Field-Effect" Transistor Proceedings of the IRE. ,vol. 11, pp. 1365- 1376 ,(1952) , 10.1109/JRPROC.1952.273964
C.A. Mead, Schottky barrier gate field effect transistor Proceedings of the IEEE. ,vol. 54, pp. 307- 308 ,(1966) , 10.1109/PROC.1966.4661
T.L. Chiu, H.N. Ghosh, Characteristics of the junction-gate field effect transistor with short channel length Solid-State Electronics. ,vol. 14, pp. 1307- 1317 ,(1971) , 10.1016/0038-1101(71)90120-1
F.M. Klaassen, J. Prins, Noise of field-effect transistors at very high frequencies IEEE Transactions on Electron Devices. ,vol. 16, pp. 952- 957 ,(1969) , 10.1109/T-ED.1969.16886
M. Reiser, Two-dimensional analysis of substrate effects in junction f.e.t.s Electronics Letters. ,vol. 6, pp. 493- 494 ,(1970) , 10.1049/EL:19700343
J.R. Hauser, Small signal properties of field effect devices IEEE Transactions on Electron Devices. ,vol. 12, pp. 605- 618 ,(1965) , 10.1109/T-ED.1965.15619