作者: JJ Lee , GZ Xing , JB Yi , T Chen , M Ionescu
DOI: 10.1063/1.4861165
关键词:
摘要: Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped films, samples codoped exhibit a stronger magnetization giant coercivity of 1200 Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing exchange interaction between 3d electrons localized carriers induced Eu3+ ions codoping. The insight gained modulating in oxides opens up an avenue for applications requiring non-volatility spintronic devices.