Magnetic memory and method for writing to magnetic memory
作者： Kenchi Ito
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摘要: A magnetic random access memory which employs spin torque magnetization reversal having a small write current value is applied. The includes: switching element the conduction of controlled by gate electrode, and three magnetoresistance effect elements connected to in series. Each may be TMR or GMR that includes multilayered film composed fixed layer, non-magnetic layer free layer. central serves as storage element. are manufactured such an absolute necessary for changing direction at least one located both ends larger than
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