Solid-state image sensor and manufacturing method thereof

作者: Atsuo Nakagawa , Masanori Murakami , Ichiroh Murakami

DOI:

关键词:

摘要: A solid-state image sensor includes: a photoelectric conversion region formed in an upper part of semiconductor substrate, for generating charges by conversion; transfer the substrate and located on side region, transferring charges; electrode over above region. The further first insulating film which covers electrode; antireflection film; light-shielding is at least electrode. have opening

参考文章(8)
Keisuke Hatano, Yasutaka Nakashiba, Solid state image sensor and method for fabricating the same ,(2002)
Takaaki Sarai, Junichi Furukawa, Kazushi Wada, Kouichi Harada, Solid state imager with reduced smear ,(1996)
Nobukazu Teranishi, Kohichi Arai, Takashi Nakano, Nobuhiko Mutoh, Solid-state imaging device with a film of low hydrogen permeability and a method of manufacturing same ,(2000)
Murakami Ichiro, Nakashiba Yasutaka, SOLIDSTATE IMAGE PICKUP DEVICE AND MANUFACTURE THEREOF ,(2000)
淳二 山根, Junji Yamane, Solid-state image pickup device and its manufacture ,(1993)
Tomoki Yamada, Solid state imaging device ,(2008)