作者: Atsuo Nakagawa , Masanori Murakami , Ichiroh Murakami
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摘要: A solid-state image sensor includes: a photoelectric conversion region formed in an upper part of semiconductor substrate, for generating charges by conversion; transfer the substrate and located on side region, transferring charges; electrode over above region. The further first insulating film which covers electrode; antireflection film; light-shielding is at least electrode. have opening