Perpendicular magnetic anisotropy and its electrical control in FeNiB ultrathin films
作者： Kay Yakushiji , Akio Fukushima , Shingo Tamaru , Hitoshi Kubota , Shinji Yuasa
DOI: 10.1063/5.0033283
关键词:
摘要: We study the perpendicular magnetic anisotropy in (Fe100−xNix)80B20 (FeNiB) films with various Ni contents. Perpendicularly magnetized are achieved when content is range of 30 at. %–70 at. %. An effective (PMA) constant 1.1× 105 J/m3 for (Fe50Ni50)80B20 film. also fabricate tunnel junction devices containing FeNiB films, and electrical measurements show that a tunneling magnetoresistance ratio more than 20% can be having an orthogonal magnetization configuration. The PMA film clearly changes by varying bias voltage applied along FeNiB/MgO junction, voltage-controlled (VCMA) efficiency over fJ/Vm demonstrated. From systematic investigations, there no clear correlation between VCMA junction. These experimental results should facilitate development energy-efficient random-access memory.
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