Field emission from geometrically modulated tungsten-nickel sulfide / graphitic carbon nanobelts on Si microchannel plates

摘要: Abstract The low efficiency and instability of electron emission from two-dimensional (2D) materials such as WS2 NiS hamper application to vacuum microelectronic devices. Although nickel-based alloys have many favorable physicochemical properties suitable for nanoelectronics, field (FE) heterostructures comprising tungsten-nickel sulfide graphite carbon (WNi–S/C) has been seldom studied because it is difficult fabricate the nanostructures in situ. In this work, emitters composed WNi–S/C nanobelt composite are produced on Si microchannel plates (WNi–S/C@Si) hydrothermally. structure a porous vertically aligned 3D morphology addition excellent adhesion strength with substrate. Geometrical modulation WNi–S/C@Si performed by changing hydrothermal reaction temperature an ultralow turn-on electric 0.51 V μm−1 current density 0.1 mA cm−2, threshold 0.65 V μm−1 1 mA cm−2, stability 97.1% 8 h accomplished. related mechanisms investigated discussed. Moreover, finite element simulation shows that not only shape but also high aspect plays key role reducing screen effects. These outstanding suggest large potential high-performance FE nanodevices.