Electrical properties of n-type CuInSe2 single crystals
作者： H. Neumann , Nguyen Van Nam , H.-J. Höbler , G. Kühn
DOI: 10.1016/0038-1098(78)90297-1
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摘要: Abstract The electrical properties of as-grown n-type CuInSe2 single crystals were investigated in the temperature from 80 to about 700 K. electron mobility data could be analysed accounting for scattering by acoustic, polar optical and nonpolar phonons ionized neutral impurities. are found highly compensated with n « NA ≈ ND. Besides a shallow donor level an ionization energy some 10-3 eV there indications deep (0.22 ± 0.03) eV.
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