Low-temperature properties of epsilon -FeSi from ab initio band theory.
作者： T. Jarlborg
DOI: 10.1103/PHYSREVB.51.11106
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摘要: Local-density calculations of the electronic structure as a function temperature T and applied magnetic field H are presented for FeSi. The small band gap (6 mRy) makes FeSi change from being semiconducting at low to metallic moderate T, exchange enhancement shows strong variations with H. An unusual situation, when local has closed gap, is favorable additional spin fluctuations. Low-T properties understood mean-field based on structure, but fluctuations have be invoked describe larger than about 200 K.
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