The Shubnikov-de Haas Effect and Quantum-Limit Phenomena in Semiconductors

摘要: In 1930 Shubnikov and de Haas (1) investigated the magnetoresistance of bismuth single crystals at liquid hydrogen temperatures. They observed an oscillatory behavior resistance as a function magnetic field which was not understood that time. The foundation for explanation laid by Landau (2). Peierls (3) suggested in 1931 quantum effects might cause phenomenon. However, too much attention paid to effect, possibly because knowledge peculiar restricted quite some Not until 1956 magnetoresistance, is now frequently called Shubnikov-de other substances, semiconductor InSb (4) Zn (5). Soon experiments on InAs (6,7) followed, present effect has been found more than dozen semiconductors. At end 1950’s first quantitative theories were offered (8–10) showed similarity with theory Haas-Van Alphen effect. Excellent review articles Kahn Frederikse (11) Adams Keyes (12) have published cover literature up about 1961. Consequently, this chapter emphasis will be newer results. section, effects, theoretical situation briefly reviewed, followed presentation recent experimental data.