作者: Hedi Mattoussi , Leonard H. Radzilowski , Bashir O. Dabbousi , Edwin L. Thomas , Moungi G. Bawendi
DOI: 10.1063/1.367978
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摘要: Electroluminescence (EL) and photoluminescence (PL) from heterostructure thin films made of organic poly (phenylene vinylene), PPV, inorganic semiconductor CdSe nanocrystals are investigated. In these devices, the PPV structure is built next to an indium tin oxide anode, using technique molecular layer-by-layer sequential adsorption, serves primarily as hole transport layer. The layer, adjacent Al electrode, spin cast nanocrystals, passivated with either groups or a wider band gap semiconductor, e.g., ZnS in present case. We find that electroluminescence signal almost exclusively generated within very weak contribution layer at higher applied voltage. performance devices influenced by thickness dot Lifetime tests reveal promising stability, operating continuously over 50–100 h. Values external quantum efficiency, η...