A compression-based morphable PCM architecture for improving resistance drift tolerance

作者: Majid Jalili , Hamid Sarbazi-Azad

DOI: 10.1109/ASAP.2014.6868667

关键词:

摘要: Due to the growing demand for large memories, using emerging technologies such as Phase Change Memories (PCM) are inevitable. PCM with appropriate scalability, power consumption and multiple bits per cell storage capability is a probable candidate substituting DRAM. Although storing seems be rational response memory demands, there significant problem achieve this goal. Resistance drift an important reliability concern that coupled multi-level (MLC PCM) system. In paper, we propose system architecture that, by exploiting benefits of compression, converts resistance prone blocks resilient in order protect from drift. Evaluations on full-system simulator, consisting quad-core ALPHA CMP banked memory, show our proposed approach provides up 9.8× reduction bit error rate, average 8% energy consumption, 21% IPC improvement.

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