Silicon surface preparation

摘要: Methods are provided for producing a pristine hydrogen-terminated silicon wafer surface with high stability against oxidation. The is treated purity, heated dilute hydrofluoric acid anionic surfactant, rinsed in-situ ultrapure water at room temperature, and dried. Alternatively, the acid, hydrogen gasified water, produced by method stable in normal clean environment greater than 3 days has been demonstrated to last without significant oxide regrowth 8 days.