Low temperature plasma si or sige for mems applications
作者： Juergen A. Foerstner , Steven M. Smith , Raymond Mervin Roop
DOI:
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摘要: A method is provided for making a MEMS structure (69). In accordance with the method, CMOS substrate (51) which has interconnect metal (53) deposited thereon. created on through plasma assisted chemical vapor deposition (PACVD) of material selected from group consisting silicon and silicon-germanium alloys. The low temperatures attendant to use PACVD allow these materials be used fabrication at back end an integrated process.
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