Method of preparing high-temperature-stable thin-film resistors

摘要: A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient resistance (TCR). Gaseous compounds tungsten silicon are decomposed on a hot substrate to deposit tungsten-silicide. The TCR the film is determined by crystallinity grain structure, which controlled ratio. Manipulation fabrication parameters allows sensitive control properties resistor.