Retention Property Analysis of Epitaxially Grown YMnO 3 /Y 2 O 3 /Si Capacitor

摘要: Retention properties of Metal/Ferroelectric/Insulator/Semiconductor (MFIS) capacitor were investigated using pulsed laser deposited Pt/YMnO 3 /Y 2 O /Si capacitor. The ferroelectric behavior epitaxial YMnO film was recognized on Pt/Sapphire. Therefore, we attempted to fabricate system improve the property. C-V and measurements reveal that Y has equivalent ferroelectricity compared Pt/sapphire. retention property depending polarizing voltage indicates fully polarized domain is responsible. Although time at - 5 V with minor loop P-E hysteresis below 10 s, 15 domains exceeds 4 s.