The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces
作者： Junguang Tao , J. W. Chai , Z. Zhang , J. S. Pan , S. J. Wang
DOI: 10.1063/1.4883865
关键词:
摘要: Energy-band alignments for molybdenum disulphide (MoS 2 ) films on high-k dielectric oxides have been studied using photoemission spectroscopy. The valence band offset (VBO) at …
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