Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

摘要: Using the advanced technology developed to visualize melt-solid interface in low Prandtl number materials, crystal growth rates and shapes have been measured germanium lead tin telluride semiconductors grown vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations determine shapes, measure rates, improve furnace ampoule designs is demonstrated. observed real-time were verified by quenching mechanically induced demarcation, they also confirmed machined models ascertain absence geometric distortions. Interface depended upon position insulation zone, varied with nature being grown, dependent on extent transition zones at ends ampoule. Actual significantly from constant translation rate response thermophysical properties its melt thermal conditions existing interface. In elemental semiconductor exceeded imposed rate, but compound less than rate. Finally, loading influenced positions, rates.