Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures
作者： T. Y. Lin , H. M. Chen , M. S. Tsai , Y. F. Chen , F. F. Fang
DOI: 10.1103/PHYSREVB.58.13793
关键词:
摘要: We present results of electrical and optical measurements in an ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}/\mathrm{G}\mathrm{a}\mathrm{N}$ heterostructure. The presence a two-dimensional electron gas at the high-quality heterointerface is confirmed by Shubnikov--de Haas measurement, which shows well-resolved magnetoresistance oscillations starting fields below 3 T 1.3 K. From temperature dependence oscillation amplitude, obtained effective mass $(0.24\ifmmode\pm\else\textpm\fi{}{0.02)m}_{0}$ excellent agreement with value cyclotron resonance (2D) systems, but larger than values theoretical experimental GaN bulk films. point out that effective-mass enhancement 2D systems due to effects band nonparabolicity wave-function penetration into barrier material. photoconductivity reveal persistent (PPC) does exist heterostructure, PPC behavior heterojunction quite different from epitaxial thin A possible mechanism presented interpret observed effect.
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