Nucleation kinetics in thin film growth. I. Computer simulation of nucleation and growth behaviour

摘要: Abstract The nucleation and initial growth of thin films deposited from the vapour phase on to a substrate has been analysed with aid an electronic computer. model process, which employs atomistic formulation theory 1 , takes into account variation adatom capture rate size stable islands effect island coalescence. Detailed calculations are reported for conditions where critical nucleus contains one, two three atoms influence changing during event is explored. A moderately simple set equations presented relating saturation density size, deposition rate, temperature binding energy nucleus.