Ion-bombardment induced light emission from Si(1 0 0) surfaces under continuous germane exposures

摘要: Abstract The intensities of the optical spectral lines emitted from a Si(1 0 0) surface under Ar + ion bombardment are studied as function kinetic energy (1–5 keV) and partial pressure germane. In these experiments, flux is held constant while either or germane varied. excited neutral Si (SiI, 288 nm), Ge (GeI, 265 nm 304 nm), H Balmer beta (486 nm) gamma (434 nm) observed. With increasing pressure, broad emission feature develops between 330 365 nm assigned to GeH 2 and/or 3 species. Si, Ge, β γ bombarded increase with greater pressures in manner similar that previously observed for silane exposures. contrast monotonic above higher incident energies, alpha (656 nm) line exhibits unique behavior. Paralleling behavior exposed surfaces, intensity transition decreases at all measured