Aging effects in pentacene thin-film transistors: Analysis of the density of states modification
作者： F. De Angelis , S. Cipolloni , L. Mariucci , G. Fortunato
DOI: 10.1063/1.2203742
关键词:
摘要: Field effect analysis has been employed in order to calculate the density of states high quality pentacene thin-film transistors. The degradation electrical characteristics caused by exposure air studied and discussed term modification. calculated approximated two exponential terms, as amorphous silicon, it used a two-dimensional numerical simulation reproduce characteristic variation with respect temperature aging time.
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