Radio-frequency plasma modeling for low-temperature processing
作者： Toshiaki Makabe
DOI: 10.1016/S1049-250X(01)80031-8
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摘要: Abstract Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As basis of processing, an rf electron swarm transport under nonequilibrium conditions is described by Boltzmann equation. The system equations and various methods modeling are given.
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