Photoelectrolysis and physical properties of the semiconducting electrode WO2
作者： M. A. Butler
DOI: 10.1063/1.323948
关键词:
摘要: … is the physical properties of the semiconductor and the degree to which they can be modified to optimize the performance of the cell. In a recent publication2 we reported the operation …
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(15)
Sigetosi Tanisaki, Crystal Structure of Monoclinic Tungsten Trioxide at Room Temperature Journal of the Physical Society of Japan. ,vol. 15, pp. 573- 581 ,(1960) , 10.1143/JPSJ.15.573
James Patrick Hoare, The electrochemistry of oxygen ,(1968)
Wolfgang W. Gärtner, Depletion-Layer Photoeffects in Semiconductors Physical Review. ,vol. 116, pp. 84- 87 ,(1959) , 10.1103/PHYSREV.116.84
Y. G. Chai, W. W. Anderson, Semiconductor‐electrolyte photovoltaic cell energy conversion efficiency Applied Physics Letters. ,vol. 27, pp. 183- 184 ,(1975) , 10.1063/1.88420
Frank Lohmann, Notizen: Fermi-Niveau und Flachbandpotential von Molekülkristallen aromatischer Kohlenwasserstoffe Zeitschrift für Naturforschung A. ,vol. 22, pp. 843- 844 ,(1967) , 10.1515/ZNA-1967-0541
R. C. Hughes, Bulk recombination of charge carriers in polymer films: Poly‐N‐vinylcarbazole complexed with trinitrofluorenone The Journal of Chemical Physics. ,vol. 58, pp. 2212- 2219 ,(1973) , 10.1063/1.1679494
R. De Gryse, W. P. Gomes, F. Cardon, J. Vennik, On the Interpretation of Mott‐Schottky Plots Determined at Semiconductor/Electrolyte Systems Journal of The Electrochemical Society. ,vol. 122, pp. 711- 712 ,(1975) , 10.1149/1.2134298
E. Salje, A new type of electro-optic effect in semiconducting WO3 Journal of Applied Crystallography. ,vol. 7, pp. 615- 617 ,(1974) , 10.1107/S0021889874010545
Günther Harbeke, Absorption edge in ferroelectric SbSI under electric fields Journal of Physics and Chemistry of Solids. ,vol. 24, pp. 957- 963 ,(1963) , 10.1016/0022-3697(63)90074-X
Rajaram Bhat, Sorab K. Ghandhi, B. Jayant Baliga, Measurement of energy band gap using an electrolyte‐semiconductor junction: Water–gallium indium arsenide alloys Journal of Applied Physics. ,vol. 46, pp. 3941- 3945 ,(1975) , 10.1063/1.322142