High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer
作者： Seung Yeop Myong , Kobsak Sriprapha , Shinsuke Miyajima , Makoto Konagai , Akira Yamada
DOI: 10.1063/1.2752736
关键词:
摘要: The authors develop a hydrogenated protocrystalline silicon (pc-Si:H)/hydrogenated microcrystalline (μc-Si:H) double-junction solar cell structure employing boron-doped zinc oxide (ZnO:B) intermediate layer. Highly stable intrinsic pc-Si:H and μc-Si:H absorbers are prepared by 60MHz very-high-frequency plasma-enhanced chemical vapor deposition technique. Degenerate ZnO:B back reflectors deposited via metal organic Because the layer reduces potential thickness for absorber in top cell, this double-juncion is promising candidate to fabricate highly Si-based thin-film cells. Consequently, high conversion efficiency of 12.0% achieved.
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