作者: Chunhua Cui , Jian Bi , Daojiang Gao , Keqing Zhao
DOI: 10.1016/J.JALLCOM.2007.08.013
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摘要: Abstract Highly crystallized BaWO 4 films have been prepared by a galvanic cell method without impressed current on tungsten substrates at room temperature. The surface morphology, grain size and crystal phase of controlled effectively adjusting ion-concentration, pH even adding adequate surfactant. are characterized scanning electron microscopy (SEM), X-ray diffraction (XRD). results indicate that the single uniform surfaces. was changed under different treatment conditions.