Room-temperature ferromagnetism in p-type ZnO:N films prepared by oxidizing Zn3N2 in oxygen plasma
作者： Yuping Jin , Nuannuan Zhang , Huizhong Xu , Bin Zhang
DOI: 10.1063/1.5042283
关键词:
摘要: P-type ZnO:N films have been prepared by oxidizing Zn3N2 in an oxygen plasma. The film oxidized at 200 °C, with the highest hole carrier concentration of 1.50 × 1017 cm−3 and lowest vacancy (VO) content (INBE/IVo = 1:0.4), exhibits room-temperature ferromagnetism (FM). first-principles calculations reveal that observed FM originates from p-p interaction between substitutional N (NO) neighboring O atom. strongly relies on NO carriers, while VO defects suppress FM. Our results highlight origin mechanism p-type N-doped ZnO.P-type ZnO.
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