Simultaneous improvement of piezoelectric and magnetic properties in diamagnetic ion modified BiFeO3 film

摘要: Abstract Multiferroic B i F e O 3 (BFO) and 0.97 Y 0.03 0.95 S c 0.05 (BYFSO) films were fabricated on FTO coated glass substrate using sol-gel spin-coating technique. Y–Sc co-doping induces the structural distortion without changing crystal structure (rhombohedral: R3c) of BFO. The electrical magnetic properties co-doped film may tuned due to increase in grain particles size. high dielectric constant ( r = 290 ) low loss t a n δ 0.084 indicates improved insulating BYFSO film. Increase oxygen vacancy concentration is explained with leakage current density, which follows Ohmic-SCLC conduction mechanism. Switching 180 0 domains into non- (maximum 71 109 type) ensures ferrolectric piezoelectric enhance significantly saturation magnetization M s ), remanent are 9.45 m u / , 6.154  respectively at coercive H field 0.822 kOe. Room temperature multiferroic be useful for non-volatile RRAM memory application.