Origin of planar Hall effect in type-II Weyl semimetal MoTe2
作者： W. K. Zhu , L. Pi , C. J. Zhang , W. Tong , J. Yang
DOI: 10.1063/1.5094231
关键词:
摘要: Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, origins of PHE various systems are not fully distinguished and understood. Here we perform systematic study on anisotropic MR (AMR) Td-MoTe2, type-II WSM. Although AMR curves can be well fitted by theoretical formulas, demonstrate that resistivity arises from orbital (OMR), instead as expected effect. In contrast, absence indicates large OMR dominates over This explains why it difficult measure WSMs. We argue measured related with only when simultaneously observed.
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