作者: Sang-Hoon Park , Hyun-Kyung Kim , Dong-Joon Ahn , Sang-Ick Lee , Kwang Chul Roh
DOI: 10.1016/J.ELECOM.2013.05.028
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摘要: Abstract Si nanoparticles were successfully entrapped between graphene nanosheets by simple self-assembly of chemically modified (RGO) without using any chemical/physical linkers. The resulting Si/RGO architecture possessed a more efficient conducting/buffering framework for when compared to the mechanically mixed product. exhibited an improved cyclability (1481 mAh/g after 50 cycles) and showed favorable high-rate capability.