High-speed low-chirp semiconductor lasers

摘要: Publisher Summary The use of quantum wells and dots for the active region lasers leads to lower induced chirp when they are directly modulated, permitting direct laser modulation that can save cost separate external modulators. This chapter provides a comparison InAlGaAs with InGaAsP long-wavelength quantum-well in terms high-speed performance extraction important parameters such as gain, differential photon lifetime, temperature dependence, chirp. DC characteristics presented among theoretical models. Insights into novel quantum-dot operation provide between p-type doping tunneling injection broadband operation. In optical component market telecom datacom applications, reduction is driving force technology innovations. As result, modulated semiconductor operating multi-Gb/s communication systems have become choice local area metropolitan networks. They reduce complexity implementation cost, eliminating need modulator.