Adatom kinetics on and below the surface: The existence of a new diffusion channel
作者： Jörg Neugebauer , Tosja K. Zywietz , Matthias Scheffler , John E. Northrup , Huajie Chen
DOI: 10.1103/PHYSREVLETT.90.056101
关键词:
摘要: Employing density-functional theory in combination with scanning tunneling microscopy, we demonstrate that a thin metallic film on a semiconductor surface may open an efficient and hitherto not expected diffusion channel for lateral adatom transport: adatoms may prefer diffusion within this metallic layer rather than on top of the surface. Based on this concept, we interpret recent experiments: We explain why and when In acts as a surfactant on GaN surfaces, why Ga acts as an autosurfactant, and how this mechanism can be used to …
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