100 GHz low-noise MESFET, HFET, and MSM technology for 10 Gb/s OEIC applications

作者: Jinghui Mu , Milton Feng

DOI: 10.1117/12.370204

关键词:

摘要: Optical interconnects possess great potential in applications for short-distance, multiple channel parallel connections at the chip-to-chip, board-to-board, back plane, and local area network levels of high performance computing environments. Low-loss high-bandwidth advantages optical fiber over those coaxial cables become sizable when transmission speed exceeds Gb/s. OEIC (Opto-Electronic Integrated Circuits) receivers transmitters are suitable both free-space fiber-optic short-wavelength links. Such chip sets will be able to support link distances from less than 1 mm chip-to-chip km (LAN) systems. As a high-speed receiver these systems, monolithic OEICs very attractive because their operation, compactness, cost reduction. In this paper, we review theoretical limit MSM (Metal-Semiconductor-Metal) photodetector. 3-dB bandwidth 50x50 um2 detector studied. The recent progress on 100 GHz MESFET (Metal Semiconductor Field Effect Transistor), InP HFET (Heterojunction Transistor) also presented.

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