作者: Mohammadreza Nematollahi , Xiaodong Yang , Ursula J. Gibson , Turid W. Reenaas
DOI: 10.1016/J.TSF.2015.07.046
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摘要: Abstract We present a method to deposit films with range of doping concentrations/dilute alloys, from single target in pulsed laser deposition (PLD). Cr-doped ZnS were deposited by ablating consisting Cr particles (diameter 20–100 μm) embedded ZnS:Cr matrix. The content the film was varied 2.0–5.0 at.% simply varying fluence, or number pre-ablation pulses. Such doping/composition is normally not achieved using PLD. Details ablation study, which needed prior deposition, are also presented.