High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition

摘要: Homoepitaxial silicon thick films have been produced by medium pressure plasma chemical vapor deposition at rates as fast 60nm∕s and a temperature of around 700°C, with silane gas partial 4mTorr. The continuous transition the film structures from agglomerated to faceted columnar epitaxial planar structure was observed an increase in power. calorimetric analysis during has also confirmed that thermal boundary layer thickness between substrate reduced increasing power became comparable mean free path vapors when epitaxy achieved high rates. In addition, rate for growth linearly pressure. These potentially indicate less coagulated atom clusters formed contributed effectively growth.