Disorder-induced carrier localization in ultrathin strained SrRuO3 epitaxial films
作者： Rajesh V. Chopdekar , Yayoi Takamura , Yuri Suzuki
DOI: 10.1063/1.2168437
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摘要: In this study we explore the influence of disorder on properties epitaxial SrRuO3 thin films. Disorder includes interface effects from misfit strain and bulk cation substitutions interstitial defects. Isostructural perovskites, including LaAlO3, SrTiO3, DyScO3, GdScO3, BaTiO3, were used as growth platforms to place films under either biaxial tensile or compressive strain. addition, (001)SrTiO3 codeposited with FeOx, CoO, SrFeOx concentrations up 10% compare distributed throughout film confined surfaces interfaces. Pure exhibited metallic behavior low residual resistivity (<0.1mΩcm), underwent a ferromagnetic transition at suppressed Curie temperature (TC) 145K. The addition impurity oxides raised film’s affected low-temperature magnetotransport. Interface did not seem play dominant role in carrier localization, but few per...
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