A selector device based on graphene–oxide heterostructures for memristor crossbar applications
作者： Miao Wang , Xiaojuan Lian , Yiming Pan , Junwen Zeng , Chengyu Wang
DOI: 10.1007/S00339-015-9208-Y
关键词:
摘要: Most of the potential applications memristive devices adopt crossbar architecture for ultra-high density. One biggest challenges is severe residue leakage current (sneak path) issue. A possible solution introducing a selector device with strong nonlinear current–voltage (I–V) characteristics in series each memristor arrays. Here, we demonstrate novel based on graphene–oxide heterostructures, which successfully converts typical linear TaO x into device. The origin nonlinearity heterostructures studied detail, highlights an important role interfaces.
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