作者: Yue Li Song , Wei Fen Jiang , Peng Fei Ji , Yong Li , Feng Qun Zhou
DOI: 10.1016/J.JLUMIN.2017.07.065
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摘要: Abstract Nanostructured ZnO/Si heterojunctions (ZnO/Si-NPA) has been fabricated through growing nanostructured ZnO on the silicon nanoporous pillar array by using chemical vapor deposition method. Current density-voltage characteristics of ZnO/Si-NPA show a diode-like rectification behavior with turn-on voltage ~ 2.2 V at current density 1.0 mA/cm 2 and forward-to-reverse ratio 178.1 ± 5.0 V. The carrier transport properties obey Ohmic law space-charge-limited-current less than greater 4.8 V, respectively. prototypical light emitting diode (LED) based yields white electroluminescence chromaticity coordinates (0.24, 0.28), correlative color temperature 20394 K rendering index 89.7. It is believed that this LED will be promising candidate in field emission.