Integrated resonant microbeam sensor and transistor oscillator

摘要: At least one microbeam situated on a substrate, having resonant frequency dependent the strain which may be affected by bending of substrate. The beam or beams have sense and drive electrodes proximate to form capacitors with being other electrode. capacitance varies as moves in vibration. electrode is connected an input transistor, such gate base, output transistor. transistor has load impedance capacitive component aid sustaining vibration at frequency. A high ohm resistor between drain appropriately bias gate. substrate caused magnitude physical stimulus measured. However, not utilized nor desired filter temperature sensing configurations invention. resonance indication parameter. Variants sensor implemented different placements electrodes, additional electronics needed implement various geometry. Additional and/or also incorporated sensor.