Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device
作者： Stefan Tegen , Rolf Weis , Marko Lemke
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摘要: A semiconductor device includes a source zone of first conductivity type formed in electrode fin that extends from surface into portion. drain region the is second channel/body transistor between and fins at distance to surface. The extend along lateral direction. width gate sections, which are arranged on opposing sides fin, direction perpendicular greater than fins.
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