Electric field-induced magnetic switching in Mn:ZnO film
作者： S. X. Ren , G. W. Sun , J. Zhao , J. Y. Dong , Y. Wei
DOI: 10.1063/1.4883259
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摘要: A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film applying reversible electric field. significant enhancement of the ferromagnetism film, to about five times larger than that initial (as-grown) state (IS), obtained into low resistance state. X-ray photoelectron spectroscopy demonstrated existence abundant oxygen vacancies IS film. We suggest this field-induced effect originates with migration and redistribution during RS. Our work indicates is an effective simple method increase diluted oxide films. This provides promising direction for research spintronic devices.
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