Boron in mesoporous Si — Where have all the carriers gone?
作者： G Polisski , D Kovalev , G Dollinger , T Sulima , F Koch
DOI: 10.1016/S0921-4526(99)00562-1
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摘要: Abstract Highly-doped p-type Si is electrochemically etched in an HF-based electrolyte to produce mesoporous surface layers. Using both elastic-recoil detection analysis and secondary ion mass spectroscopy it concluded that B atoms are not removed from the porous layer. Crystallite size for most samples related average dopant spacing. It argued electrolytic erosion of stops when layer passivated.
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