EPITAXIAL LAYER-DEPOSITED GALLIUM NITRIDE FILM COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
作者： Yoshizumi Yusuke , Ishizuka Takashi , Mihashi Fuminori
DOI:
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摘要: PROBLEM TO BE SOLVED: To provide: an epitaxial layer-deposited GaN film composite substrate including AlGaN layer as less in occurrence of crack; and a method for manufacturing such substrate.SOLUTION: An 2 comprises: 1 arranged by putting together support 11 13; InGaN 22 (0
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