Impact ionisation ratio in In0.73Ga0.27As0.57P0.43
作者： Masanori Ito , Takao Kaneda , Kazuo Nakajima , Yoshikazu Toyoma , Toyoshi Yamaoka
DOI: 10.1049/EL:19780281
关键词:
摘要: A window structure InGaAsP avalanche photodiode (a.p.d.) has been fabricated by using liquid-phase epitaxy on (111B) InP. Multiplication characteristics show that the impact ionisation rate for electrons is larger than holes (?>s). The ratio ?/s was estimated to be 3?4. low-noise a.p.d. will realised a with electron-initiated multiplication.
sci-hub.se 参考文章(2)
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