Preferential Syntheses of Semiconducting Vertically Aligned Single-Walled Carbon Nanotubes for Direct Use in FETs
作者： Liangti Qu , Feng Du , Liming Dai
DOI: 10.1021/NL800967N
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摘要: We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.
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