A novel transparent pn+ junction based on indium tin oxides
作者： Zhenguo Ji , Zhenjie He , Yongliang Song , Kun Liu , Yin Xiang
DOI: 10.1016/J.TSF.2004.02.021
关键词:
摘要: Abstract p-Type indium-doped SnO2 thin films were successfully fabricated on degenerate n+ indium tin oxide glass and quartz by sol gel dip-coating method. It was found from the X-ray diffraction results that in same rutile structure as of undoped SnO2. Hall effect measurement showed for In/Sn ratio≤0.33 process temperature approximately 525 °C, p-type. The I–V curve a prototype transparent pn+ junction consisting layer p-type tin-doped typical rectifying characteristics.
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